Characterization of pattern geometrical effect on line end shortening in x-ray lithography
نویسندگان
چکیده
منابع مشابه
Effects of Residual Aberrations on Line-end Shortening in 193 nm Lithography
This paper extends and further validates the methodology for calibrating 193nm chemically amplified resist models and applying the models to line-end shortening simulation in the presence of image imperfections [1]. SPLAT, an imaging simulator, is used to simulate the light intensity at the bottom of resist film and predict the resulted wafer patterns in the presence of lens aberrations. The ma...
متن کاملthe washback effect of discretepoint vs. integrative tests on the retention of content in knowledge tests
در این پایان نامه تاثیر دو نوع تست جزیی نگر و کلی نگر بر به یادسپاری محتوا ارزیابی شده که نتایج نشان دهندهکارایی تستهای کلی نگر بیشتر از سایر آزمونها است
15 صفحه اولSoft-x-ray projection lithography
Soft-x-ray projection imaging is demonstrated by the use of 14-nm radiation from a laser plasma source and a single-surface multilayer-coated ellipsoidal condenser. Aberrations in the condenser and the Schwarzschild imaging objective are characterized and correlated with imaging performance. A new Schwarzschild housing, designed for improved alignment stability, is described.
متن کاملEffects of Polyphenol Dalbergin on the Biological Changes of Ionizing Radiation in X-ray on T47D Cell Line
This article has no abstract.
متن کاملthe effect of e-64 on the developmental competence of sheep cocs during in vitro maturation
in the present study, the effect of e-64 at different concentrations (0.5, 1, 5 and 10 µm) added to (1) the ivm medium on oocyte nuclear maturation and developmental competence of ovine oocytes, and (2) to the ivc medium on embryonic development of ovine embryos were investigated.
ذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 1998
ISSN: 0734-211X
DOI: 10.1116/1.590488